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Renesas 3SK318 manual

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Table of contents for the manual

  • Page 1

    Rev.2.00 Aug 10, 2005 page 1 of 7 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-6 00) Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross m odulation c haracteristics • Capable low v oltage operati on; +B= 5V Outline 1. Source 2. Gate1 3. [...]

  • Page 2

    3SK318 Rev.2.00 Aug 10, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 ° C) Item Symbol Ratings Unit Drain to source voltage V DS 6 V Gate1 to source voltage V G1S ±6 V Gate2 to source voltage V G2S ±6 V Drain current I D 20 mA Channel power dissipati on Pch 100 mW Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C [...]

  • Page 3

    3SK318 Rev.2.00 Aug 10, 2005 page 3 of 7 200 150 100 50 0 50 100 150 200 Channel Power Dissipation Pch (mW) Ambient Temperature Ta ( ° C) Maximum Channel Power Dissipation Curve 0 24 6 8 10 V G2S = 3 V Drain to Source Voltage V DS (V) Drain Current I D (mA) Typical Output Characteristics 4 8 12 16 20 0.9 V 1.0 V 1.1 V 1.2 V 1.3 V 1.6 V 1.5 V 1.4 V[...]

  • Page 4

    3SK318 Rev.2.00 Aug 10, 2005 page 4 of 7 5 4 3 2 1 0 51 0 1 5 2 0 25 25 20 15 10 5 0 24 6 8 1 0 Drain Current I D (mA) Noise Figure NF (dB) Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage Power Gain PG (dB) Drain to Source Voltage V DS (V) V DS = 3.5 V V G2S = 3 V f = 900 MHz V G2S = 3 V I D = 10 mA f = 900 MHz 5 4 3 2 1 0 24 [...]

  • Page 5

    3SK318 Rev.2.00 Aug 10, 2005 page 5 of 7 V DS = 3.5 V , V G2S = 3 V I D = 10mA V DS = 3.5 V , V G2S = 3 V I D = 10mA V DS = 3.5 V , V G2S = 3 V I D = 10mA V DS = 3.5 V , V G2S = 3 V I D = 10mA 10 5 4 3 2 1.5 1 .8 –2 –3 –4 –5 –10 .6 .4 .2 0 –.2 –.4 –.6 –.8 –1 –1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 Scale: 1 / div. 0 ° 30 ° 60 ° 90[...]

  • Page 6

    3SK318 Rev.2.00 Aug 10, 2005 page 6 of 7 S Parameter (V DS = 3.5V, V G2S = 3V, I D = 10mA, Zo = 50 Ω ) S11 S21 S12 S22 Freq. (MHz) MAG. ANG. MA G. ANG. MAG. ANG. MAG. A NG. 50 1.000 –2.8 2.41 176.3 0.00068 89.1 0.999 –2.2 100 0.998 –5.8 2.41 171.9 0.00176 88.5 0.996 –4.5 150 0.997 –9.1 2.39 167.6 0.00223 80.7 0.996 –6.7 200 0.994 –1[...]

  • Page 7

    3SK318 Rev.2.00 Aug 10, 2005 page 7 of 7 Package Dimensions A S M x S y e e 2 b 1 A EH E L L 1 Q c D B B b AA b 1 b 3 c 1 c B-B Section Pattern of terminal position areas b 4 l 1 b 5 l 1 e 1 e 2 e A 3 L P S A A 2 A 1 A A 1 A 2 b b 1 c c 1 D E e H E L L P x y b 4 e 1 l 1 Q 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.2 0.32 0.25 0.9 0.13 0.1 1 2.0 1.25 0.6[...]

  • Page 8

    Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safe[...]