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Cypress CY7C1012DV33 manual

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Table of contents for the manual

  • Page 1

    Cypress Semiconducto r Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 38-05610 Rev . *D Revised November 6, 2008 CY7C1012DV33 12-Mbit (512K X 24) S tat ic RAM Features ■ High speed ❐ t AA = 10 ns ■ Low active po w e r ❐ I CC = 175 mA at 10 ns ■ Low CMOS standby power ❐ I SB2 = 25 mA ■[...]

  • Page 2

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 2 of 1 1 Selection Guide Description –10 Unit Maximum Access T ime 10 ns Maximum Operating Current 175 mA Maximum CMOS S tandby Current 25 mA Pin Configuration Figure 1. 1 19-Ball PBGA ( Top View) [1] 1234567 A N C AAAAA N C B NC A A CE 1 AA N C C I/O 12 NC CE 2 NC CE 3 NC I/O 0 D I/O 13 V DD V[...]

  • Page 3

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 3 of 1 1 Maximum Ratings Exceeding maximum ratin gs may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ............. ................... . –65 ° C to +150 ° C Ambient T emper ature with Power Applied ............ ....................... ....[...]

  • Page 4

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 4 of 1 1 Cap acitance T ested initia lly and after any design or process changes that may affect these parameters . Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V CC = 3.3V 8 pF C OUT I/O Capacit ance 10 pF Thermal Resist ance T ested initia lly[...]

  • Page 5

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 5 of 1 1 AC Switching Characteristics Over the Operating Range [5] Parameter Description –10 Unit Min Max Read Cycle t power [6] V CC (T ypical) to the First Access 100 μ s t RC Read Cycle T ime 10 ns t AA Address to Data V alid 10 ns t OHA Data Hold from Address Change 3 ns t ACE CE Active LO[...]

  • Page 6

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 6 of 1 1 Dat a Retention Characteristics Over the Operating Range Parameter Descrip tion Conditions [3] Min Ty p Max Unit V DR V CC for Data Retention 2 V I CCDR Data Retention Current V CC = 2V , CE > V CC – 0.2V , V IN > V CC – 0.2V or V IN < 0.2V 25 mA t CDR [1 1 ] Chip Deselect t[...]

  • Page 7

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 7 of 1 1 Figure 5. Write Cycle No. 1 (CE Contro ll ed) [3, 16, 17] Figure 6. W rite Cycle No. 2 (W E Con trolled, OE HI GH During Wri te) [3, 16, 17] Figure 7. Write Cycle No. 3 (WE Cont ro lled , OE LOW) [3, 17] Switching W aveforms (continued) t WC DA T A V ALID t AW t SA t PWE t HA t HD t SD t[...]

  • Page 8

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 8 of 1 1 T ruth T able CE 1 CE 2 CE 3 OE WE I/O 0 – I/O 7 I/O 8 – I/O 15 I/O 16 – I/O 23 Mode Power H H H X X High Z High Z High Z Power Down S tandby (I SB ) L H H L H Data Out High Z High Z Read Active (I CC ) H L H L H Hi g h Z Data Ou t Hig h Z Read Active (I CC ) H H L L H High Z High [...]

  • Page 9

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 9 of 1 1 Ordering Information Spee d (ns) Ordering Code Package Name Package T ype Operating Range 10 CY7C1012DV33-10BGXI 51-851 15 1 19-Ball Plastic Bal l Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Industrial Package Diagram Figure 8. 1 19-Ball PBGA (14 x 22 x 2.4 mm) 51-851 15-*B [+] Feedback[...]

  • Page 10

    CY7C1012DV33 Document Number: 38-05610 Rev . *D Page 10 of 1 1 Document History Page Document Title: CY7C1012DV33 12-Mbit (512K X 24) St atic RAM Document Number: 38-05610 Rev . ECN No. Orig. of Change Submissi on Date Description of Chan ge ** 250650 SYT See ECN New data sheet *A 469517 NXR S ee ECN Converted from Advance Information to Preliminar[...]

  • Page 11

    CY7C1012DV33 © Cypress Semico nductor Corporat ion, 2004-2008. The information cont ained herein is su bject to change withou t notice. Cypress S emiconductor Cor porati on ass umes no respo nsi bility f or the use of any circuitry othe r than circuitry embodied in a Cy press product. Nor does it convey or im ply any license under p atent or ot he[...]