Cypress CY62158EV30 manual

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Table of contents for the manual

  • Page 1

    8-Mbit (1024K x 8) S t atic RAM CY62158EV30 MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Court • San J ose , CA 95134-1709 • 408-943-2600 Document #: 38-05578 Rev . *D Revised April 19, 2007 Features • V ery high speed: 45 ns — Wide voltage range: 2.20V–3.6 0V • Pin compatible with CY62158DV30 • Ultra low standby power [...]

  • Page 2

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 2 of 1 1 Pin Configurations [3] Product Port folio Product V CC Range (V) Spee d (ns) Power Dissipation Operating I CC (mA) Standb y , I SB2 (µA) f = 1 MHz f = f max Min T yp [4] Max T yp [4] Max T yp [4] Max T yp [4] Max CY62158EV30LL 2.2 3.0 3.6 45 1.8 3 18 25 2 8 Top View WE V CC A 11 A 10 [...]

  • Page 3

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 3 of 1 1 Maximum Ratings Exceeding the maximum rati ngs may impair the useful life of the device. The se user guid elines are no t tested. S torage T emperature .............. .............. ...... –65°C to +150°C Ambient T emperature with Power Applied ........... .........................[...]

  • Page 4

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 4 of 1 1 Thermal Resist ance [9] Parameter Description T est Co nditions BGA TSOP II Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , soldered on a 3 x 4.5 inch, two-layer pri nted circuit b oard 72 76.88 ° C/W Θ JC Thermal Resistance (Junction to Case) 8.86 13.52 ° C/W AC T [...]

  • Page 5

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 5 of 1 1 Switching Characteristics (Over the Operating Range) [1 1] Parameter Description 45 ns Unit Min Max Read Cycle t RC Read Cycle Time 45 ns t AA Address to Data V alid 45 ns t OHA Data Hold from Address Change 10 ns t ACE CE 1 LOW and CE 2 HIGH to Dat a V alid 45 ns t DOE OE LOW to Dat a[...]

  • Page 6

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 6 of 1 1 Switching W aveforms Read Cycle No. 1 (Add ress Transition Controlled) [15, 16] Read Cycle No. 2 (OE C ontrolled) [16, 17] ADDRESS DATA OUT PREVIOUS DA TA VALID DATA VALID t RC t AA t OHA 50% 50% DATA VALID t RC t ACE t DOE t LZOE t LZCE t PU HIGH IM PEDANC E t HZOE t HZCE t PD HIGH I [...]

  • Page 7

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 7 of 1 1 Write Cycle No. 1 (WE Controlled) [1 4, 18, 19 ] Write Cycle No. 2 (CE 1 or CE 2 Controlled) [14, 18, 19] Switching W aveforms (continued) t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE VALID DATA NOTE 20 CE 1 ADDRESS CE 2 WE DATA IO OE t WC VALID DATA t AW t SA t PWE t HA t HD t SD [...]

  • Page 8

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 8 of 1 1 Write Cycle No. 3 (WE Controlled, OE LOW) [19] T ruth T able CE 1 CE 2 WE OE Inputs/Outputs Mode Power H X X X High Z Deselect/Power Down S tandby (I SB ) X L X X High Z Deselect/Power Down S tandby (I SB ) L H H L Dat a Out Read Active (I CC ) L H H H H igh Z Output Disabled Active (I[...]

  • Page 9

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 9 of 1 1 Package Diagrams Figure 1. 48-Ball VFBGA (6 x 8 x 1 mm), 51-8515 0 A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX. 0.25 C 0.10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3.75 5.25 B C D E F G H 65 46 5 23 1 D H [...]

  • Page 10

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 10 of 1 1 © Cypress Semico nductor Corp oration, 200 4-2007. The infor mation cont ained herein i s subject to chang e without notice . Cypress S emicond uctor Corpora tion assumes no resp onsibility for the use of any circuitr y other than circ uitry embodied in a Cypress product . Nor does i[...]

  • Page 11

    CY62158EV30 MoBL ® Document #: 38-05578 Rev . *D Page 1 1 of 1 1 Document History Page Document Title: CY62158EV30 MoBL ® , 8-Mbit (1024K x 8) St atic RAM Document Number: 38 -05578 REV . ECN NO. Issue Date Orig. of Change Description of Chang e ** 270329 See ECN PCI New Data Sheet *A 291271 See ECN SYT Converted from Advance Information to Preli[...]