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Philips TDA1561Q manual

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  • Page 1

    DA T A SH EET Preliminary specification Supersedes data of 1997 Jun 1 1 File under Integrated Circuits, IC01 1997 Aug 14 INTEGRA TED CIRCUITS TDA1561Q 2 × 23 W high efficiency car radio power amplifier[...]

  • Page 2

    1997 Aug 14 2 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q FEA TURES • Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode • High Common Mode Rejection Ratio (CMRR) • Mute/standby/operating/SE-only (mode select pin) • Zero crossing mute an[...]

  • Page 3

    1997 Aug 14 3 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q BLOCK DIAGRAM Fig.1 Block diagram. handbook, full pagewidth MLD214 REFERENCE SOURCES MUTE/STANDBY THERMAL/ SHORT-CIRCUIT PROTECTION HIGHER TEMPERATURE BTL DISABLE 0.5V P MUTE R MUTE R 7 V P 12 3 13 2 1 IN1 IN2 CIN MODE 1/2R[...]

  • Page 4

    1997 Aug 14 4 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q PINNING SYMBOL PIN DESCRIPTION IN1 1 input 1 HV P 2 half supply voltage control input MODE 3 mute/standby/operating/SE-only GND1 4 ground 1 OUT1 5 inverting output 1 OUT1 6 non-inverting output 1 V P 7 supply voltage OUT2 8[...]

  • Page 5

    1997 Aug 14 5 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q FUNCTIONAL DESCRIPTION The TDA1561Q contains two identical amplifiers with differential inputs. At low output power (up to output amplitudes of 3 V (RMS) at V P = 14.4 V), the device operates as a normal SE amplifier. When [...]

  • Page 6

    1997 Aug 14 6 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q LIMITING V ALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. The value of R th(c-h) depends on the application (see Fig.3). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V [...]

  • Page 7

    1997 Aug 14 7 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deli[...]

  • Page 8

    1997 Aug 14 8 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q DC CHARACTERISTICS V P = 14.4 V ; T amb =2 5 ° C; measured in Fig.6; unless otherwise specified. Note 1. The circuit is DC biased at V P = 6 to 18 V and AC operating at V P =8t o1 8V . SYMBOL P ARAMETER CONDITIONS MIN. TY[...]

  • Page 9

    1997 Aug 14 9 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q AC CHARACTERISTICS V P = 14.4 V ; R L =4 Ω ; C 11 = 1 000 µ F; f = 1 kHz; T amb =2 5 ° C; measured in Fig.6; unless otherwise specified. Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequ[...]

  • Page 10

    1997 Aug 14 10 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q TEST AND APPLICA TION INFORMA TION Fig.5 Test diagram. handbook, full pagewidth 220 nF 470 nF 4 8 9 11 5 6 7 3 1 2 12 13 10 220 nF 4 Ω 3.9 Ω 1000 µ F (16 V) 100 nF 3.9 Ω 10 nF 0.5V P 0.5R s MLD223 TDA1561Q 4 Ω 3.9[...]

  • Page 11

    1997 Aug 14 11 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Fig.6 Application diagram. handbook, full pagewidth 220 nF 100 nF 2 x 220 nF 4 8 9 11 5 6 7 3 1 2 12 13 power ground signal ground 10 220 nF 1000 µ F 16 V 100 nF 4 Ω 3.9 Ω 1000 µ F (16 V) 10 nF 3.9 Ω 100 nF 0.5V P [...]

  • Page 12

    1997 Aug 14 12 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q handbook, full pagewidth MGK182 Mode select gnd m s s Vp GND In1 In2 sgnd Cool Power m Out 2 Out 1 TDA1561Q 4 × 220 nF 86.36 43.18 Fig.7 PCB layout (component side) for the application of Fig.6. Dimensions in mm.[...]

  • Page 13

    1997 Aug 14 13 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q handbook, full pagewidth MGK183 Mode gnd m s s Vp GND In2 In1 sgnd m Out1 Out2 86.36 43.18 Fig.8 PCB layout (soldering side) for the application of Fig.6. Dimensions in mm.[...]

  • Page 14

    1997 Aug 14 14 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q INTERNAL PIN CONFIGURA TIONS PIN NAME EQUIV ALENT CIRCUIT 1,12,13 IN1, CIN, IN2 2H V P 3 MODE h pin 1 pin 12 pin 13 V P MLD217 handbook, halfpage MLD218 pin 2 handbook, halfpage MLD221 pin 3 V P[...]

  • Page 15

    1997 Aug 14 15 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q 5, 9 OUT1, OUT2 6, 8 OUT1, OUT2 11 C 11 PIN NAME EQUIV ALENT CIRCUIT handbook, halfpage MLD220 V P pins 5, 9 handbook, halfpage MLD219 V P pins 6, 8 MLD222 pin 11[...]

  • Page 16

    1997 Aug 14 16 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q ADDITIONAL APPLICA TION INFORMA TION Fig.9 Dissipation; sine wave driven. handbook, halfpage 01 0 P o (W) 25 0 5 10 15 20 2 P d (W) 46 8 MBH692 (1) (2) Input signal 1 kHz, sinusoidal; V P = 14.4 V. (1) For a conventional B[...]

  • Page 17

    1997 Aug 14 17 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q handbook, full pagewidth 220 nF pink noise 100 nF 2 × 220 nF 4 8 9 11 5 6 7 3 1 2 12 13 10 220 nF 4 Ω 3.9 Ω 1000 µ F (16 V) 10 nF 3.9 Ω 100 nF 1/2V P on condition MGC427 TDA1561Q 4 Ω 3.9 Ω 10 nF 3.9 Ω 100 nF [...]

  • Page 18

    1997 Aug 14 18 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Fig.15 I P as a function of V ms (pin 3). handbook, halfpage 02 8 6 off mute V MODE (V) I P (mA) 160 0 40 80 120 4 MBH696 SE/BTL SE only V P = 14.4 V; V in = 0 mV; R I = ∞ . Fig.16 I ms as a function of V ms . handbook, [...]

  • Page 19

    1997 Aug 14 19 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Fig.19 THD + noise as a function of frequency. handbook, halfpage 10 1 10 − 1 10 − 2 MBH700 10 10 2 10 3 10 4 f (Hz) THD + N (%) 10 5 (1) (2) (1) P o =1 0W . (2) P o =1W . Fig.20 Power bandwidth at THD = 1%. handbook, [...]

  • Page 20

    1997 Aug 14 20 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Fig.23 Channel separation as a function of frequency. handbook, halfpage − 100 − 60 − 40 − 20 0 MBH704 10 10 2 10 3 10 4 f (Hz) α cs (dB) 10 5 (2) (1) (1) P o =1W . (2) P o =1 0W . Fig.24 Mode select circuit. hand[...]

  • Page 21

    1997 Aug 14 21 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Fig.25 Output waveforms. handbook, full pagewidth MBH691 0 1 2 t (ms) 3 1/2 V P 1/2 V P 0 − V P V P V P 0 V P V load (1) (2) (3) V master V slave 0 See Fig.5: V load =V 6 − V 5 or V 8 − V 9 V master =V 6 or V 8 V sla[...]

  • Page 22

    1997 Aug 14 22 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q P ACKAGE OUTLINE UNIT A e 1 A 2 b p cD (1) E (1) Z (1) de D h LL 3 m REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 3.4 v 0.8 12.2 1[...]

  • Page 23

    1997 Aug 14 23 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wav[...]

  • Page 24

    Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or cont[...]