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Fujitsu MB3887 manual

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Table of contents for the manual

  • Page 1

    DS04-27709-3E FUJITSU SEMICONDUCT OR DA T A S H E E T ASSP F or P o wer Supply Applications (Secondar y batter y) DC/DC Con ver ter IC f or Char ging Li-ion batter y MB3887 ■ DESCRIPTION The MB3887 is a DC/DC conv er ter IC suitable f or down-conv ersion, using pulse-width (PWM) charging and enabling output v oltage to be set to any desired le ve[...]

  • Page 2

    MB3887 2 (Continued) • Output v oltage setting using external resistor : 1 cell to 4 cells • High efficiency : 96 % (VIN = 19 V, V o = 16.8 V) • Wide range of oper ating supply v oltages : 8 V to 25 V • Output v oltage setting accuracy : 4.2 V ± 0.74 % (T a = − 10 ° C to + 85 ° C , per cell) • Charging current accuracy : ± 5 % • B[...]

  • Page 3

    MB3887 3 ■ PIN ASSIGNMENT (TOP VIEW) (FPT-24P-M03) 1 2 3 4 5 6 7 8 9 10 11 12 − INC2 : OUTC2 : + INE2 : − INE2 : FB2 : VREF : FB1 : − INE1 : + INE1 : OUTC1 : OUTD : − INC1 : 24 23 22 21 20 19 18 17 16 15 14 13 : + INC2 : GND : CS : VCC (O) : OUT : VH : VCC : RT : − INE3 : FB3 : CTL : + INC1[...]

  • Page 4

    MB3887 4 ■ PIN DESCRIPTION Pin No. Symbol I/O Descriptions 1 − INC2 I Current detection amplifier (Current Amp2) input terminal. 2 OUTC2 O Current detection amplifier (Current Amp2) output terminal. 3 + INE2 I Error amplifier (Error Amp2) non-inverted input terminal. 4 − INE2 I Error amplifier (Error Amp2) inverted input terminal. 5 FB2 O Err[...]

  • Page 5

    MB3887 5 ■ BLOCK DIA GRAM + − − + 8 10 13 12 9 + − − + 4 2 24 1 3 × 20 × 20 + + + − 5 20 21 19 − + + + − 11 16 22 17 6 23 14 18 <Current Amp1> <Error Amp1> 7 VREF <Current Amp2> <Error Amp2> VREF <Error Amp3> VREF VREF VREF 5.0 V 4.2 V 10 µ A 15 <SOFT> 2.5 V 1.5 V <OUT> <UVLO> <O[...]

  • Page 6

    MB3887 6 ■ ABSOLUTE MAXIMUM RA TINGS * : The package is mounted on the dual-sided epo xy board (10 cm × 10 cm) . W ARNING: Semiconductor de vices can be per manently damaged by application of stress (v oltage, current, temperature , etc.) in e xcess of absolute maximum ratings. Do not e xceed these ratings. P arameter Symbol Conditions Rating Un[...]

  • Page 7

    MB3887 7 ■ RECOMMENDED OPERA TING CONDITIONS W ARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor de vice. All of the de vice’ s electr ical characteristics are warranted when the de vice is operated within these ra nges. Always use semiconductor devices within their recommende[...]

  • Page 8

    MB3887 8 ■ ELECTRICAL CHARA CTERISTICS (T a = + 25 ° C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) * : Standard design v alue. (Continued) Pa r a m e t e r Sym- bol Pin No. Conditions Va l u e Unit Min T yp Max 1. Reference voltage block [REF] Output voltage V REF1 6T a = + 25 ° C 4.967 5.000 5.041 V V REF2 6T a = − 10 ° C to + 85 ° C 4.95 5.[...]

  • Page 9

    MB3887 9 (T a = + 25 ° C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) * : Standard design v alue (Continued) Pa r a m e t e r Sym- bol Pin No. Conditions Va l u e Unit Min T yp Max 5-2. Error amplifier block [Error Amp3] Threshold voltage V TH1 16 FB3 = 2 V, Ta = + 25 ° C 4.183 4.200 4.225 V V TH2 16 FB3 = 2 V, Ta = − 10 ° C to + 85 ° C 4.169 4.[...]

  • Page 10

    MB3887 10 (T a = + 25 ° C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) * : Standard design v alue (Continued) Pa r a m e t e r Sym- bol Pin No. Conditions Va l u e Unit Min T yp Max 6. Current detection amplifier block [Current Amp1, Current Amp2] Current detection voltage V OUTC1 2, 10 + INC1 = + INC2 = 3 V to VCC, ∆ Vin = − 100 mV 1.9 2.0 2.1 V[...]

  • Page 11

    MB3887 11 (Continued) (T a = + 25 ° C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) * : Standard design v alue Pa r a m e t e r Sym- bol Pin No. Conditions Va l u e Unit Min T yp Max 8. Output block [OUT] Output source current I SOURCE 20 OUT = 13 V, Duty ≤ 5 % (t = 1 / f OSC × Duty) − 400*  mA Output sink current I SINK 20 OUT = 19 V, Duty[...]

  • Page 12

    MB3887 12 ■ TYPICAL CHARA CTERISTICS (Continued) 6 5 4 3 2 1 0 0 5 10 15 20 25 Ta = + 25 ° C CTL = 5 V 6 5 4 3 2 1 0 0 5 10 15 20 25 Ta = + 25 ° C CTL = 5 V VREF = 0 mA 6 5 4 3 2 1 0 0 5 10 15 20 25 30 Ta = + 25 ° C VCC = 19 V CTL = 5 V 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 − 40 − 20 0 20 40 60 80 100 VCC = 19 V CTL = 5 V 1000 900 8[...]

  • Page 13

    MB3887 13 (Continued) 1 M 100 k 10 k 10 100 1000 Ta = + 25 ° C VCC = 19 V CTL = 5 V 340 330 320 310 300 290 280 270 260 0 5 10 15 20 25 Ta = + 25 ° C CTL = 5 V RT = 47 k Ω 320 315 310 305 300 295 290 285 280 275 270 265 260 − 40 − 20 0 20 40 60 80 100 VCC = 19 V CTL = 5 V RT = 47 k Ω 4.25 2.24 4.23 2.22 4.21 4.20 4.19 4.18 4.17 4.16 4.15 [...]

  • Page 14

    MB3887 14 (Continued) − + 7 8 9 + OUT IN (5) (4) (3) 240 k Ω 2.4 k Ω 10 k Ω 10 k Ω 10 k Ω 10 k Ω Error Amp1 (Error Amp2) 4.2 V VCC = 19 V 1 µ F Ta = + 25 ° C A V φ 40 20 0 − 20 − 40 180 90 0 − 90 − 180 1 k 10 k 100 k 1 M 10 M − + + 15 16 22 + OUT IN 240 k Ω 2.4 k Ω 10 k Ω 10 k Ω 10 k Ω 10 k Ω Error Amp3 4.2 V [...]

  • Page 15

    MB3887 15 (Continued) 800 700 600 500 400 300 200 100 0 740 − 40 − 20 0 20 40 60 80 100 Power dissipation vs. Ambient temperature Power dissipation P D (mW) Ambient temperature Ta ( ° C)[...]

  • Page 16

    MB3887 16 ■ FUNCTIONAL DESCRIPTION 1. DC/DC Con ver ter Unit (1) Reference v oltage bloc k (Ref) The ref erence voltage generator uses the v oltage supplied from the VCC ter minal (pin 18) to generate a tem- perature-compensated, stab le voltage (5.0 V T yp) used as the ref erence supply v oltage f or the IC’ s inter nal circuitr y . This ter m[...]

  • Page 17

    MB3887 17 (7) PWM comparator bloc k (PWM Comp.) The PWM comparator circuit is a v oltage-pulse width conv er ter f or controlling the output duty of the error amplifiers (Error Amp1 to Error Amp3) depending on their output v oltage. The PWM comparator circuit compares the triangular wa ve generated b y the tr iangular w av e oscillator to the error[...]

  • Page 18

    MB3887 18 3. Soft-Star t Function Soft-start block (SOFT) Connecting a capacitor to the CS ter minal (pin 22) pre v ents r ush currents when the IC is tur ned on. Using an error amplifier f or soft-star t detection makes the soft-star t time constant, being independent of the output load of the DC/DC conv er ter . ■ SETTING THE CHARGING V OL T A [...]

  • Page 19

    MB3887 19 ■ METHOD OF SETTING THE SOFT -ST ART TIME F or pre venting rush current upon activation of IC, the IC allo ws soft-star t using the capacitor (Cs) connected to the CS ter minal (pin 22) . When CTL ter minal (pin 14) is placed under “H” lev el and IC is activ ated (V CC ≥ UVLO threshold v oltage) , Q2 is tur ned off and the e xter [...]

  • Page 20

    MB3887 20 ■ A C AD APT OR V OL T A GE DETECTION • With an e xter nal resistor connected to the + INE2 ter minal (pin 3) , the IC enters the dynamically-controlled charging mode to reduce the charge current to keep A C adapter power constant when the par tial potential point A of the A C adapter voltage (VCC) becomes lo wer than the v oltage at [...]

  • Page 21

    MB3887 21 ■ PR OCESSING WITHOUT USING THE CURRENT AMP When Current Amp is not used, connect the + INC1 ter minal (pin 13) , + INC2 ter minal (pin 24) , − INC1 ter minal (pin 12) , and − INC2 ter minal (pin 1) to VREF, and then lea ve OUTC1 terminal (pin 10) and OUTC2 ter minal (pin 2) open. 24 13 12 1 2 10 6 − INC1 + INC1 + INC2 − INC2 OU[...]

  • Page 22

    MB3887 22 ■ PR OCESSING WITHOUT USING OF THE ERROR AMP When Error Amp is not used, leav e FB1 ter minal (pin 7) , FB2 ter minal (pin 5) open and connect the − INE1 ter minal (pin 8) and − INE2 ter minal (pin 4) to GND and connect + INE1 ter minal (pin 9) , and + INE2 ter minal (pin 3) , to VREF . 9 5 8 4 7 + INE1 GND + INE2 − INE1 − INE2 [...]

  • Page 23

    MB3887 23 ■ PR OCESSING WITHOUT USING OF THE CS TERMINAL When soft-star t function is not used, leav e the CS ter minal (pin 22) open. ■ NO TE ON AN EXTERNAL REVERSE-CURRENT PREVENTIVE DIODE • Inser t a rev erse-current prev entive diode at one of the three locations marked * to pre v ent re verse current from the batter y . • When selectin[...]

  • Page 24

    MB3887 24 ■ APPLICA TION EXAMPLE A B Q1 Output voltage (Battery voltage) is adjustable D1 I1 Battery R8 100 k Ω C10 5600 pF + + + R9 10 k Ω R14 1 k Ω R10 30 k Ω R11 30 k Ω R7 22 k Ω R18 200 k Ω R19 100 k Ω R17 100 k Ω C6 1500 pF C4 0.022 µ F R3 330 k Ω R2 47 k Ω C9 0.1 µ F C7 0.1 µ F C5 0.1 µ F C2 100 µ F C3 100 µ F C1[...]

  • Page 25

    MB3887 25 ■ P ARTS LIST Note : VISHA Y SILICONIX : VISHA Y Inter technolog y , Inc. ROHM : R OHM CO ., L TD . TDK : TDK Cor poration SANY O : SANY O Electric Co ., Ltd. KY OCERA : K yocera Corporation MURA T A : Murata Man u f actur ing Co ., Ltd. SEIDEN TECHNO : SEIDEN TECHNO CO ., L TD . KO A : KO A C o r p o r a t i o n ssm : SUSUMU Co ., Ltd.[...]

  • Page 26

    MB3887 26 ■ REFERENCE D A T A (Continued) 100 98 96 94 92 90 88 86 84 82 80 10 m 100 m 1 10 Ta = + 25 ° C VIN = 19 V BA TT charge voltage = set at 12.6 V SW = ON Efficiency η (%) = (V BA TT × I BA TT ) / (V IN × I IN ) × 100 100 98 96 94 92 90 88 86 84 82 80 02 46 8 1 0 1 2 1 4 1 6 Ta = + 25 ° C VIN = 19 V BA TT charge voltage = set at 12.6[...]

  • Page 27

    MB3887 27 (Continued) 100 98 96 94 92 90 88 86 84 82 80 10 m 100 m 1 10 Ta = + 25 ° C VIN = 19 V BA TT charge voltage = set at 16.8 V SW = ON Efficiency η (%) = (V BA TT × I BA TT ) / (V IN × I IN ) × 100 100 98 96 94 92 90 88 86 84 82 80 0 2 4 6 8 1 0 1 21 4 1 6 1 82 0 Ta = + 25 ° C VIN = 19 V BA TT charge voltage = set at 16.8 V SW = ON Eff[...]

  • Page 28

    MB3887 28 (Continued) 100 0 − 100 15 10 5 0 V BA TT (mV) V D (V) Ta = + 25 ° C VIN = 19 V BA TT = 1.5 A 98 mVp-p 012345 6 7 8 9 1 0 ( µ s) V D V BA TT 100 0 − 100 15 10 5 0 V BA TT (mV) V D (V) Ta = + 25 ° C VIN = 19 V BA TT = 3.0 A 98 mVp-p V D V BA TT 012 3 456 789 1 0 ( µ s) 100 0 − 100 15 10 5 0 V BA TT ( mV) V D (V) Ta = + 25 ° C VI[...]

  • Page 29

    MB3887 29 (Continued) 20 10 0 4 2 0 5 0 V CTL (V) V CS (V) V BA TT (V) 0 2 4 6 8 1 01 21 41 61 82 0 (ms) Ta = + 25 ° C, VIN = 19 V BA TT = 12 Ω V BA TT V CTL ts = 10.4 ms V CS 20 10 0 4 2 0 5 0 V CTL (V) V CS (V) V BA TT (V) 0 2 4 6 8 1 01 21 41 61 82 0 (ms) Ta = + 25 ° C VIN = 19 V BA TT = 12 Ω V BA TT V CTL V CS 20 10 0 4 2 0 5 0 V CTL (V) [...]

  • Page 30

    MB3887 30 ■ USA GE PRECA UTIONS • Printed circuit board ground lines should be set up with consideration f or common impedance. • T ake appropriate static electr icity measures. • Containers f or semiconductor mater ials should hav e anti-static protection or be made of conductive material. • After mounting, printed circuit boards should [...]

  • Page 31

    MB3887 31 ■ P A CKA GE DIMENSION 24-pin plastic SSOP (FPT-24P-M03) Note1: Pins width and pins thickness include plating thickness. Note2: * This dimension does not include resin protrusion. Dimensions in mm (inches) . C 2001 FUJITSU LIMITED F24018S-c-3-4 7.75±0.10(.305±.004) 5.60±0.10 7.60±0.20 (.220±.004) (.299±.008) * 0.10(.004) 11 2 13 2[...]

  • Page 32

    MB3887 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorpor[...]