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Fairchild BSS84 manual

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Table of contents for the manual

  • Page 1

    July 2002  2002 Fairc hi ld Sem iconduct or Cor por at ion BSS84 Rev B(W ) BSS84 P-Channel Enhancement Mode Field Effect Transistor General Descriptio n These P-Channel enhanc em ent m ode field eff ec t transis tors are produced us ing Fairchild’ s proprietary, high cell dens ity, DMOS t ec hnology. This very hi gh density proc ess has been d[...]

  • Page 2

    BSS84 Rev B(W ) Electrical Charact eristics T A = 25°C unless otherw ise noted Symbol P arameter Test Conditions Min Typ Max Units Off Charact eristics BV DSS Drain–Sourc e B reakdown Voltage V GS = 0 V, I D = –250 µ A –50 V ∆ BV DSS ∆ T J Breakdown Voltage Tem perature Coeffic ient I D = –250 µ A,Referenced to 25 ° C –48 mV/ ° C[...]

  • Page 3

    BSS84 Rev B(W ) Ty pical Characteristics 0 0.2 0.4 0.6 0.8 1 012345 -V DS , DR AIN TO SOU RCE VOL T AGE (V) -I D , DRAIN CURRENT (A) V GS = -5V -4.5V -3.5V -3.0V -2.5V 0.8 1 1.2 1.4 1.6 1.8 2 0 0. 2 0. 4 0.6 0.8 1 -I D , DRAIN CURRE NT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE O N-RESISTANCE V GS =-3.0V -4.0V -5.0V -4.5V -3.5V Figure 1. On-Region Char[...]

  • Page 4

    BSS84 Rev B(W ) Ty pical Characteristics 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 Q g , GATE CHA RGE (nC) -V GS , GATE-S OURCE VOLTAGE (V) I D = -0.10A V DS = -8V -25V -30V 0 20 40 60 80 100 0 1 02 03 04 05 0 -V DS , DRAIN TO SOURCE V OLTAGE (V) CAPACITANCE (pF) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge C haracteristics. Figur e 8. Capaci[...]

  • Page 5

    DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF AN Y PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P A TENT RIGHTS, NOR[...]