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Usually it results from the lack of time and certainty about functionalities of purchased items. Unfortunately, networking and start-up of Fairchild AN-7502 alone are not enough. An instruction contains a number of clues concerning respective functionalities, safety rules, maintenance methods (what means should be used), eventual defects of Fairchild AN-7502, and methods of problem resolution. Eventually, when one still can't find the answer to his problems, he will be directed to the Fairchild service. Lately animated manuals and instructional videos are quite popular among customers. These kinds of user manuals are effective; they assure that a customer will familiarize himself with the whole material, and won't skip complicated, technical information of Fairchild AN-7502.
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Table of contents for the manual
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Page 1
©2002 Fairch ild Semicond uctor Corpo ration Application No te 7502 Rev. A1 AN-7502 Power MOSFET Swit ching Wavefo rms: A New Insight The examination of power MOSFET voltage an d current wa vef or ms du ring switching t ransition s rev eal s that t he device characte rizati on now practiced by ind ustry is i nade- quate . I n this Note, device wav[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 FIGURE 4. IDEALIZED POWER MOSFET WAVEFORMS FIGURE 5. STEP-VOLTAGE FORCING FUNCTION P ower MOSFET devices are hi ghly ca paci ti ve in nature; hence , simp le ca pacitor re sponses to the f orcing funct ions off er a g ood v ehicle for comparison. The ad vant ageous choice[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Stat e 2: MOS A ctIv e, JFET ActIv e This st ate gr aphic ally illust rates the dram atic inf luence that the JFET has on the po wer MOSF ET drain -vol tage wa ve- f orm. Instead of ha ving to discharge C x from V DD to gr ound, the later al MOSFET ne ed only s wing V X t[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 FIGURE 9. NORMALIZED RFM15N15 SWITCHING WAVE- FORMS FOR CANSTANT GATE-CURRENT DRIVE. Step-V oltag e Ga te Drive The majori ty of power MO SFET applica tions emplo y a step gate- voltag e input wit h a finite source re sistance R O . Ofte n R O f or turn-on is not the same[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Experimental V erification Since the s witching equa tions for step current s and voltages diff er only by gat e-current ma gnitudes f or the same de vice type , one wo uld e xpect a plot of sw itching time v ersus 1/R O to be of the s ame form as thos e obtai ned for a s[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 F or pea k gate volta ges othe r than 10 v olts , and l oad resi s- tances other tha n BV DSS /I D(MAX) , the equati ons of T a ble 1 ma y be used i n conjun ction w ith sl ope esti mates f rom the chara cte rizati on curve s f or C X and C GS + C X (1 + g M /g MJ ) at th[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Tu r n - O n State 1: M OS Off, JFE T Off I PK1 = V G /R O State 2: MO S Active, JFET Ac tive I PK2 = (V G - V GS(TH) )/R O State 3: MOS Ac tive, JFET Saturated I PK3 = (V G - V G(SA T) )/R O T urn-Off State 4: MOS S aturated, JFET S aturated I PK4 = V G /R O State 5: MOS[...]
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©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Case 3 :Common-So urce Gate Drive, Figure B-3 FIGURE B-3. COMMON-SOURCE GATE-DRIVE CIRCUIT Tu r n - O n R O = R D (drain -to-gro und capacitan ce of driving de vice adds to C GS of driven MOSFET .) Tu r n O f f R O = r DS(ON) of driving MOSFET w hen R D is ver y much gr e[...]
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P A TENT RIGHTS, NOR [...]