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Cypress CY62138EV30 manual

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Table of contents for the manual

  • Page 1

    2-Mbit (256K x 8) MoBL ® St a t i c R A M CY62138EV30 MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Cou r t • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05577 Rev . *A Revised February 14, 2006 Features • V ery hig h speed: 45 ns — Wide volt a ge range: 2.20V – 3.60V • Pin-compatible with CY62138CV30 • Ult[...]

  • Page 2

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 2 of 9 Pin Configuration [2] Product Port folio Product V CC Range (V) Spee d (ns) Power Dissipation Operating I CC (mA) St an dby I SB2 ( µ A) f = 1 MHz f = f max Min. T yp. [3] Max. T yp. [3] Max. T yp. [3] Max. T yp. [3] Max. CY62138EV30LL 2.2 3.0 3.6 45 2 2.5 15 20 1 7 Notes: 2. NC pins ar[...]

  • Page 3

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 3 of 9 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature .............. .............. ...... –65°C to + 150°C Ambient T e mperature with Power Applied ........... .............. ............ .......... 55°C to +125°C S[...]

  • Page 4

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 4 of 9 Thermal Resist ance Parameter D escr iption T est Conditions BGA Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , soldered on a 3 x 4.5 inch, four-layer printed circuit board 72 ° C/W Θ JC Thermal Resistance (Junction to Case) 8.86 ° C/W AC T est Loads and W aveforms P[...]

  • Page 5

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 5 of 9 Switching Characteristics (Over the Operating Range) [9] Parameter Description 45 ns Unit Min. Max. Read Cycle t RC Read Cycle T ime 45 ns t AA Address to Data V alid 45 ns t OHA Data Hold from Address Change 10 ns t ACE CE LOW to Dat a V alid 45 ns t DOE OE LOW to Data V alid 22 ns t LZ[...]

  • Page 6

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 6 of 9 Read Cycle No. 2 (OE Controlled) [14, 15] Write Cycle No. 1 (WE Controlled) [16, 18] Notes: 15. Address valid prior to or coi ncident with CE t ransit ion LOW . 16. Data I/O is high impedance if OE = V IH . 17. During this period, the I/Os are in outp ut state and input signals should no[...]

  • Page 7

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 7 of 9 Write Cycle No. 2 (CE Controlled) [16, 18] Write Cycle No. 3 (WE Controlled, OE LOW) [18] Switching W aveforms (continued) t WC DATA IN VALID t AW t SA t PWE t HA t HD t SD t SCE CE ADDRESS WE DATA I/O OE DA T A I/O ADDRESS t HD t SD t LZWE t SA t HA t AW t WC CE t HZWE DATA IN VALID NOT[...]

  • Page 8

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 8 of 9 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no resp onsibility f or the u se of any circuitry o ther than circui try embodied i n a Cypress prod uct[...]

  • Page 9

    CY62138EV30 MoBL ® Document #: 38-05577 Rev . *A Page 9 of 9 Document History Page Document Title: CY62138EV30 2-Mbit (256 K x 8) MoBL ® St atic RAM Document Number: 38-05577 REV . ECN NO. Issue Date Orig. of Change Description of Chang e ** 237432 See ECN AJU New data sheet *A 427817 See ECN NXR Removed 35 ns S peed Bin Removed “L” version R[...]