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Cypress CY62126EV30 manual

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Table of contents for the manual

  • Page 1

    MoBL ® ,CY62126EV30 1-Mbit (64K x 16) S t atic RAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 38-05486 Rev . *E Revised January 5, 2009 Features ■ High speed: 45 ns ■ T emperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive: –40°C to +125°C ■ Wide volta[...]

  • Page 2

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 2 of 13 Pin Configurations Figure 1. 44-Ball VFBGA (T op View) Figure 2. 44-Pin TSOP II (T op View) [2] T able 1. Product Por t folio Notes 2. NC pins are not connected on the die. 3. T ypical values are included for reference only and are not guaranteed or test ed. T ypical values are measur[...]

  • Page 3

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 3 of 13 Maximum Ratin gs Exceeding maximum ratings may s horten the batter y life of the device. These user guid elines are not tested. S torage T emperature ................ .............. ... –65°C to +150°C Ambient T e mperature with Power Applied ............ ............... .........[...]

  • Page 4

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 4 of 13 Thermal Resist ance T ested initially and after an y design or proces s changes that may affect these p arameters. Parameter Description T est Co nditions VFBGA Package TSOP II Package Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , soldered on a 4.25 x 1.12 5 inch, t[...]

  • Page 5

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 5 of 13 Switching Characteristics Over the Operatin g Range [10, 1 1] Parameter Description 45 ns (Industrial) 55 ns (Automoti ve) Unit Min Max Min Max Read Cycle t RC Read Cycle Time 45 55 ns t AA Address to Data V alid 45 55 ns t OHA Data Hold from Address Change 10 10 ns t ACE CE LOW to Da[...]

  • Page 6

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 6 of 13 Switching W aveforms Figure 5. Read Cycle No. 1 (Address transition co ntrolled) [15, 16] Figure 6. Read Cy cle No. 2 (OE controlled) [16, 17] PREVIOUS DA T A V ALID DA T A V ALID t RC t AA t OHA ADDRESS DA T A OUT 50% 50% DATA VALID t RC t ACE t LZBE t LZCE t PU HIGH IMPEDANCE I CC t[...]

  • Page 7

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 7 of 13 Figure 7. Write Cycle No. 1 (WE controlled) [14, 18, 19] Figure 8. Write Cycle No. 2 (CE controlled) [14, 18, 19] Switching W aveforms (continued) t HD t SD t PWE t SA t HA t AW t WC t HZOE DATA IN NOTE 20 t BW t SCE DATA IO ADDRESS CE WE OE BHE /BLE t HD t SD t PWE t HA t AW t SCE t [...]

  • Page 8

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 8 of 13 Figure 9. Write Cycle No. 3 (WE controlled, OE LOW [19] Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW) [19] Switching W aveforms (continued) DATA IN t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW NOTE 20 CE ADDRESS WE DATA IO BHE /BLE t HD t SD t SA t HA t AW [...]

  • Page 9

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 9 of 13 T ruth T able CE WE OE BHE BLE Input s/Outputs Mode Power H X X X X High Z Deselect/Power Down S tandby (I SB ) L X X H H High Z Output Disabled Active (I CC ) LHL L L D a t a O u t ( I O 0 –IO 15 ) Read Active (I CC ) LHLHL D a t a O u t ( I O 0 –IO 7 ); IO 8 –IO 15 in High Z R[...]

  • Page 10

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 10 of 13 Package Diagrams Figure 1 1. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150) A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX. 0.25 C 0.10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3.75 5.25 B C D E F G H 65 46 5 23 1 [...]

  • Page 11

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 1 1 of 13 Figure 12. 44-Pin TSOP II (51-85087) Package Diagrams (continued) 51-85087-*A [+] Feedback[...]

  • Page 12

    MoBL ® , CY62126EV30 Document #: 38-05486 Rev . *E Page 12 of 13 Document History Page Document Title: MoBL ® CY62126EV30, 1-Mbit (64K x 16) Static RAM Document Number: 38-05486 Rev . ECN No. Subm ission Date Orig. o f Change Description of Cha nge ** 202760 See ECN A JU New data sheet *A 300835 See ECN S YT Conv erted from Advance Information to[...]

  • Page 13

    Document #: 38-05486 Rev . *E Revised January 5, 2009 Page 13 of 13 MoBL is a regi stered tradema rk, and More Batt ery Life is a trad emark, of Cypre ss Semiconductor . All products and comp any names menti oned in this document may be the trademarks o f their respec tive holders. MoBL ® , CY62126EV30 © Cypress Semicondu ctor Corporati on, 2008-[...]